Publications 2014
- Nadia Benseddik; Halima Mazari; Mohammed Mostefaoui; Kheira Ameur; Zineb Benamara, Reski Khelifi; Nawal Benyahya; Jean-Marie Bluet.
“Electrical characterisation of Schottky diodes based on SiC with different contact surfaces “
International Journal Materials Engineering Innovation 5 (2014) 285-293
DOI: 10.1504/IJMATEI.2014.066852
- H. Mazari, K. Ameur, N. Benseddik, Z. Benamara, R. Khelifi, M. Mostefaoui, N. Zougagh, N. Benyahya, R. Becharef, G. Bassou, B. Gruzza, J. M. Bluet, C. Bru-Chevallier,
“Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes”,
Sensors & Transducers 27 (2014) 253-257.
http://www.sensorsportal.com/HTML/DIGEST/P_SI_510.htm
- R. Khelifi, H. Mazari, S. Mansouri, Z. Benamara, M. Mostefaoui, K. Ameur, N. Benseddik, P. Marie, P. Ruterana, I. Monnet, J. M. Bluet, C. Bru-Chevallier,
“Characterization and Modeling of Schottky Diodes Based on Bulk GaN Unintentionally Doped”,
Sensors & Transducers 27 (2014)217-220.
http://www.sensorsportal.com/HTML/DIGEST/P_SI_504.htm
- M. Mostefaoui, H. Mazari, K. Ameur, S. Mansouri, N. Benseddik, Z. Benamara, R. Khelifi, N. Benyahya, J. M. Bluet, C. Bru-Chevallier, W. Chikhaoui
«Anomalous behavior of forward I-V and C-V characteristics of Schottky gate AlGaN/GaN HEMTs»
journals of optoelectronics and advanced materials Vol. 16 (2014), 849 - 853
http://joam.inoe.ro/index.php?option=magazine&op=view&idu=3518&catid=85
- M. Mostefaoui, H. Mazari, S. Mansouri, Z. Benamara, R. Khelifi, K. Ameur, N. Benseddik, N. Benyahya, J. M. Bluet, C. Bru-Chevallier, W. Chikhaoui,
“Current-Voltage-Temperature (I-V-T) Characteristics of Schottky-Gate of the Structures AlGaN/GaN HEMTs”,
Sensors & Transducers 27 (2014) 280-284.
http://www.sensorsportal.com/HTML/DIGEST/P_SI_515.htm
- N. Benyahya, H. Mazari, N. Benseddik, Z. Benamara, M. Mostefaoui, K. Ameur, R. Khelifi, J. M. Bluet, W. Chikhaoui, C. Bru-Chevallier,
“Characterization and Modeling I(V) of the Gate Schottky Structures HEMTs Ni/Au/AlInN/GaN”
Sensors & Transducers 27 (2014) 87-91.
http://www.sensorsportal.com/HTML/DIGEST/P_SI_482.htm
- N. Benyahya, H. Mazari, N. Benseddik, Z. Benamara, M. Mostefaoui, K. Ameur, R. Khelifi,·J. M. Bluet, W. Chikhaoui, C. Bru-Chevallier,
“Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN”,
Optical and QuantumElectronics 46 (2014) 209-219.
http://link.springer.com/article/10.1007/s11082-013-9747-4
- K. Ameur, H. Mazari, Z. Benamara, N. Benseddik, R. Khelifi, M. Mostefaoui, N. Benyahya
“Numerical simulation of solar cells based on III–V nitride compounds”
Optical and QuantumElectronics 46 (2014) 193-200.
http://link.springer.com/article/10.1007/s11082-013-9740-y
-K. Ameur, Z. Benamara, H. Mazari, N. Benseddik, R. Khelifi, M. Mostefaoui, M. A. Benamara, B. Gruzza, J. M. Bluet, C. Bru-Chevallier,
“Current Transport Mechanisms and Capacitance Characteristic in the InN/InP Schottky Structures”
Sensors & Transducers 27 (2014) 9-14.
http://link.springer.com/article/10.1007/s11082-013-9740-y
-Mekki Benamara, Macho Anani,Boudali Akkal, Zineb Benamara
“Ni/SiC–6H Schottky Barrier Diode interfacial states characterization related to temperature“
Journal of Alloys and Compounds 603 (2014) 197–201.
http://www.sciencedirect.com/science/article/pii/S0925838814005477
- A. Bensmain, H.Tayoub, B. Zebentout, Z. Benamara
« Investigation of Performance Silicon Heterojunction SolarCells Using a-Si: H or a-SiC: H at Emitter Layer ThroughAMPS-1D Simulations».
Sensors & Transducers, Vol. 27, Special Issue, May 2014, pp. 82-86
http://www.sensorsportal.com/HTML/DIGEST/P_SI_481.htm
-H. Tayoub, A. Bensmain, B.Zebentout, F. Maachou, Z. Benamara, and T. mohammed-Brahim
« 2D Numerical Analysis of Metal/Insulator/Thin Film Silicon Systems for TFT’s Applications: Investigation of Active Layer Properties on Quasi-Static Capacitance ».
Sensors & Transducers, Vol. 27, Special Issue, May 2014, pp. 347-353
http://www.sensorsportal.com/HTML/DIGEST/P_SI_526.htm
- H Dib, Z. Benamara, Z. Kari
“ The inversion layer evolution according to the report of substrate doping/gate doping of a MSpOS structure”
Sensors & Transducers, Vol. 27, Special Issue, May 2014, pp. 147-150.
http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_526.pdf
- H Dib, Z. Benamara, Z. Kari
“ Interface states densities effect at SiO2/polysilicon and SiO2/Monosilicon surfaces on N-Polysilicon/ixide/p-monosilicon capactances”
Sensors & Transducers, Vol. 27, Special Issue, May 2014, pp. 151-155.
http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_526.pdf
-M. Mostefaoui, H. Mazari, S. Khelifi, R. Dabou
«Effect of a Buffer Layer on The Performance of Thin-Film Cu(In,Ga)Se2 Solar Cells »
Journal of New Technology and materials JNTM Vol. 04, N 01(2014) 73-76.
https://sites.google.com/site/jntmjournal/68mestefaoui
-. Kheira Ameur; Halima Mazari; Zineb Benamara; Nadia Benseddik; Reski Khelifi; Mohammed Mostefaoui; Nawal Benyahya; Bernard Gruzza
« Electrical behaviour and analytical modelling of I-V and C-V characteristics of Schottky barrier diode based on nitrided InP(100) »
Int. J. of Materials Engineering Innovation > 2014 Vol.5, No.4 > pp.294 - 306
http://www.inderscienceonline.com/doi/abs/10.1504/IJMATEI.2014.066853