Publications 2013
1- M. A. Benamara, A. Talbi, ZB. Akkal, B.Gruzza, C. Robert (Univ. Sidi Bel Abbès, Clermont II)
“Analysis of C-V characteristics of InP(p)/InSb/Al2O3/Au MIS structures in wide temperature range. ”
Advanced Materials Research Journal, vol. 685 (2013) pp 179-184.
http://www.scientific.net/AMR.685.179
- 2. N. Bachir Bouiadjra, Z. Benamara, A. Sellam, L. Bideux, C. Robert, B. Gruzza
« Electronic spectroscopic study of the GaAs nitridation –Electronic Design and modeling associated »
Journal of Science and today's world 2013, volume 2, issue 3, pages: 226-233
http://www.journalsci.com/Upload/Docs/N.%20Bachir%20Bouiadjra.pdf
3- N. Bachir Bouiadjra, Z. Benamara, L. Bideux, C. Robert, B. Gruzza
« XPS and electric analysis of the GaAs(100) nitridation »
Journal of optoelectronics and advanced Materials, Vol. 15, No. 5- 6, May – June 2013, p. 405 – 409.
http://joam.inoe.ro/index.php?option=magazine&op=view&idu=3205&catid=78
4-M. A. Benamara, A.Talbi, B. Akkal, Z. Benamara, A. Baba Ahmed, B. Gruzza, C. Robert-Goumet.
“Current-and capacitance- voltage analysis as a function of temperature in Au/GaN Schottky diodes.”
Journal of Optoelectronics and Advanced Materials (JOAM) Vol15, N°5-6 May-June 2013, p417-420.
http://joam.inoe.ro/index.php?option=magazine&op=view&idu=3207&catid=78
5- A. Talbi, M. A. Benamara, Z. Benamara, B. Akkal, B. Gruzza, L. Bideux, C. Robert, G. Monier
“Study of InP(100) nitridation using AES spectroscopy and electrical analysis: Effect of annealing after nitridation.”
Journal of Optoelectronics and Advanced Materials (JOAM) Vol15, N°5-6 May-June 2013, p509-513.
http://joam.inoe.ro/index.php?option=magazine&op=view&idu=3224&catid=78
6- A. Talbi, M. A. Benamara, Z. Benamara, B. Akkal, M. Talbi, B. Gruzza, C. Robert-Goumet, L. Bideux
“Electrical Study of Alumina properties as a Function of the Deposition Rate and the Layers Thickness.”
Journal of Optoelectronics and Advanced Materials (JOAM) Vol15, N°5-6 May-June 2013, p514-518.
http://joam.inoe.ro/index.php?option=magazine&op=view&idu=3225&catid=78
7- R.Khelifi, H. Mazari, S. Mansouri, K. Ameur, Z. Benamara, M. Mostefaoui, N. Benseddik, N.Benyahya, P. Ruterana, I. Monnet, J. M. Bluet, C. Bru-Chevalier
“Comparative study of electrical parameters of Au/GaN and Hg/Gan Shottky diodes”
Journal of Optoelectronics and Advanced Materials (JOAM) Vol15, N°5-6 May-June 2013, p471-474.
http://joam.inoe.ro/index.php?option=magazine&op=view&idu=3217&catid=78
- 8- A Bensmain, H.Tayoub, B. Zebentout, Z. Benamara
« AMPS-1D investigations of interface properties on heterojunction silicon solar cells».
Journal of Optoelectronics and Advanced Materials Vol. 15, No. 5- 6, p. 425-429 (2013).
http://joam.inoe.ro/index.php?option=magazine&op=view&idu=3209&catid=78
9- H. Tayoub, A. Bensmain, B.Zebentout and Z.Benamara
« Impact of the Inhomogenous Structure of Polysilicon TFT's Active layer on the Electrostatic Potential Distribution ».
Advanced Materials Research Vol. 685 (2013) pp 352-356 (2013) Trans Tech Publications, Switzerland
http://www.scientific.net/AMR.685.352