Publications 2011:

1- N. Benseddik, Z. Benamara, H. Mazari, K. Ameur, A. Soltani, and J. M.De Jaeger

Fabrication and DC Characterizations of AlGaN/GaN High Electron Mobility Transistors with Fieldplate Over Passivation Layers”.

Sensor Lett. 9, 2302-2304 (2011), Vol. 9, 1–4, 2011.

http://dx.doi.org/10.1166/sl.2011.1764

2- K. Ameur, H. Mazari, S. Tizi, R. Khelifi, Z. Benamara, N. Benseddik, A. Chaib,N. Zougagh, M. Mostefaoui1, L. Bideux, G. Monier, B. Gruzza, «and C. Robert-Goumet.

Study of the Characteristics Current–Voltage and Capacity–Voltage of Hg/GaN/GaAs Structures

Sensor Lett, 9, 2268-2271 (2011)

http://dx.doi.org/10.1166/sl.2011.1802

3- N. Zougagh, Z. Benamara, H. Mazari, N. Benseddik,K. Ameur, G. Monier, L. Bideux, and B. Gruzza.

The dc Electrical Characterization of Hg/_-GaN/n-GaAs Devices, with Different Thicknesses of the GaN Thin Layers

Sensor Lett. 9, 2211-2214 (2011)

http://dx.doi.org/10.1166/sl.2011.1817

4- B. Zebentout, Z. Benamara, Y. Bourezig, H. Mazariand T. Mohammed-Brahim

2D-Numerical simulation of illuminated I-V characteristic in PIN (NIP) pc-Si solar cells deposited by LPCVD technique”.

Sensor Lett. 9, 2412-2415 (2011)

http://dx.doi.rg/10.1166/sl.2011.1816

5-Y. Bourezig, B. Bouabdallah, B. Zebentout, Z. Benaamra

“Numerical analysis of short channel poly-Si TFTs under off conditions”

Sensor Lett. 9, 2360-2363 (2011)

http://dx.doi.org/10.1166/sl.2011.1767